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NCEP11N10AQU - N-Channel Super Trench II Power MOSFET

General Description

General

Key Features

  • The NCEP11N10AQU uses Super Trench II technology that is.
  • VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.5V losses are minimized due to an extremely low combination of.
  • Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching.
  • Very low on-resistance RDS(on) and.

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Datasheet Details

Part number NCEP11N10AQU
Manufacturer NCE Power Semiconductor
File Size 322.05 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP11N10AQU Datasheet

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http://www.ncepower.com NCEP11N10AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AQU uses Super Trench II technology that is ● VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.5V losses are minimized due to an extremely low combination of ● Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on) and synchronous rectification.