Datasheet4U Logo Datasheet4U.com

NCEP11N10AQU - N-Channel Super Trench II Power MOSFET

NCEP11N10AQU Product details

Description

General Features The NCEP11N10AQU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance.Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.

Features

  • The NCEP11N10AQU uses Super Trench II technology that is.
  • VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.5V losses are minimize.

📥 Download Datasheet

Preview of NCEP11N10AQU PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NCEP11N10AQU
Manufacturer
NCE Power Semiconductor
File Size
322.05 KB
Datasheet
NCEP11N10AQU-NCEPowerSemiconductor.pdf
Description
N-Channel Super Trench II Power MOSFET

📁 Related Datasheet

📌 All Tags

N-Channel Super Trench Power MOSFET NCE Power Semiconductor
NCE Power Semiconductor NCEP11N10AQU-like datasheet

NCEP11N10AQU Stock/Price