Part NCEP11N10AQU
Description N-Channel Super Trench II Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 322.05 KB
NCE Power Semiconductor
NCEP11N10AQU

Overview

General Features The NCEP11N10AQU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.5V losses are minimized due to an extremely low combination of Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg.

  • VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.5V losses are minimized due to an extremely low combination of
  • Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching
  • Very low on-resistance RDS(on) and synchronous rectification.
  • 150 °C operating temperature